Effects of hydrogen atoms on redistribution of implanted boron atoms in silicon during annealing

被引：0

作者：

Yokota, Katsuhiro ^{[1
]}

Nakase, Shuusaku ^{[1
]}

Myashita, Fumiyoshi ^{[2
]}

机构：

[1] Kansai Univ, Fac Engn & HRC, Suita, Osaka 5648680, Japan

[2] Kansai Univ, Fac Informat, Osaka 5691095, Japan

来源：

ION IMPLANTATION TECHNOLOGY | 2006年 / 866卷

关键词：

silicon; boron; hydrogen; diffusion; activation; ion-implantation;

D O I：

暂无

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Silicon dual-implanted with B and H ions were annealed at temperatures of 700-900 degrees C for 30 min. On Si annealed at temperatures below 800 degrees C, the redistribution profile of B atoms was the same as that on the as-implanted Si because transient-enhanced diffusion of implanted B atoms was restricted by the presence of H atoms. On highly doped Si annealed at 900 degrees C, the diffusion of B atoms was independent of B atom concentration although it was significantly retarded in comparison with that on singly B-implanted Si.

引用

页码：88 / +

页数：2

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