Effects of hydrogen atoms on redistribution of implanted boron atoms in silicon during annealing

Silicon dual-implanted with B and H ions were annealed at temperatures of 700-900 degrees C for 30 min. On Si annealed at temperatures below 800 degrees C, the redistribution profile of B atoms was the same as that on the as-implanted Si because transient-enhanced diffusion of implanted B atoms was restricted by the presence of H atoms. On highly doped Si annealed at 900 degrees C, the diffusion of B atoms was independent of B atom concentration although it was significantly retarded in comparison with that on singly B-implanted Si.