THEORY AND EXPERIMENT FOR SILICON SCHOTTKY-BARRIER DIODES AT HIGH-CURRENT DENSITY

被引：9

作者：

WILKINSON, JM ^{[1
]}

WILCOCK, JD ^{[1
]}

BRINSON, ME ^{[1
]}

机构：

[1] MIDDLESEX POLYTECH, CTR MICROELECTR, ENFIELD, MIDDLESEX, ENGLAND

来源：

SOLID-STATE ELECTRONICS | 1977年 / 20卷 / 01期

关键词：

D O I：

10.1016/0038-1101(77)90032-6

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：45 / 50

页数：6

共 50 条

[31] MORE THEORY OF THE ADMITTANCE OF AN AMORPHOUS-SILICON SCHOTTKY-BARRIER
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