THEORY AND EXPERIMENT FOR SILICON SCHOTTKY-BARRIER DIODES AT HIGH-CURRENT DENSITY

被引：9

作者：

WILKINSON, JM ^{[1
]}

WILCOCK, JD ^{[1
]}

BRINSON, ME ^{[1
]}

机构：

[1] MIDDLESEX POLYTECH, CTR MICROELECTR, ENFIELD, MIDDLESEX, ENGLAND

来源：

SOLID-STATE ELECTRONICS | 1977年 / 20卷 / 01期

关键词：

D O I：

10.1016/0038-1101(77)90032-6

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：45 / 50

页数：6

共 50 条

[21] SILICON-CARBIDE HIGH-VOLTAGE (400 V) SCHOTTKY-BARRIER DIODES
BHATNAGAR, M
MCLARTY, PK
BALIGA, BJ
IEEE ELECTRON DEVICE LETTERS, 1992, 13 (10) : 501 - 503
[22] A THEORY OF THE ADMITTANCE OF AN AMORPHOUS-SILICON SCHOTTKY-BARRIER
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ABRAM, RA
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1983, 48 (02): : 111 - 125
[23] Calculation of the intrinsic spectral density of current fluctuations in nanometric Schottky-barrier diodes at terahertz frequencies
Mahi, F. Z.
Helmaoui, A.
Varani, L.
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PHYSICA B-CONDENSED MATTER, 2008, 403 (19-20) : 3765 - 3768
[24] STUDIES OF BARRIER HEIGHT MECHANISMS IN METAL SILICON-NITRIDE SILICON SCHOTTKY-BARRIER DIODES
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[25] METAL POLYACETYLENE SCHOTTKY-BARRIER DIODES
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[26] TRANSIENT ANALYSIS OF SCHOTTKY-BARRIER DIODES
MCCOWEN, A
SHAARI, SBH
BOARD, K
IEE PROCEEDINGS-I COMMUNICATIONS SPEECH AND VISION, 1988, 135 (03): : 71 - 75
[27] GAAS SCHOTTKY-BARRIER AVALANCHE DIODES
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ARMSTRON.LD
SOLID-STATE ELECTRONICS, 1970, 13 (01) : 53 - &
[28] RF SPUTTERED GOLD-AMORPHOUS SILICON SCHOTTKY-BARRIER DIODES
XU, L
REINHARD, DK
THOMPSON, MG
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (06) : 1004 - 1008
[29] TEMPERATURE ANOMALIES OF SCHOTTKY-BARRIER DIODES ON N-TYPE SILICON
JAGER, D
KASSING, R
JOURNAL OF APPLIED PHYSICS, 1977, 48 (10) : 4413 - 4414
[30] THEORY OF THE RESPONSE OF SCHOTTKY-BARRIER DIODES TO SURFACE PLASMA-WAVES
KARAKASHIAN, AS
BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1980, 25 (04): : 598 - 598

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