THEORY AND EXPERIMENT FOR SILICON SCHOTTKY-BARRIER DIODES AT HIGH-CURRENT DENSITY

被引:9
|
作者
WILKINSON, JM [1 ]
WILCOCK, JD [1 ]
BRINSON, ME [1 ]
机构
[1] MIDDLESEX POLYTECH, CTR MICROELECTR, ENFIELD, MIDDLESEX, ENGLAND
关键词
D O I
10.1016/0038-1101(77)90032-6
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:45 / 50
页数:6
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