ANOMALOUS ELECTROABSORPTION IN SEMI-INSULATING GAAS

被引：1
|
作者：
WALPITA, LM
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1988年 / 63卷 / 11期
关键词：
D O I：
10.1063/1.340375
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：5495 / 5499
页数：5
相关论文
共 50 条
  • [41] COMPENSATION BY DEEP LEVELS IN SEMI-INSULATING GAAS
    LOMBOS, BA
    YEMENIDJIAN, N
    AVEROUS, M
    CANADIAN JOURNAL OF PHYSICS, 1982, 60 (01) : 35 - 40
  • [42] THE ELECTRICAL AND PHOTOELECTRONIC PROPERTIES OF SEMI-INSULATING GAAS
    LOOK, DC
    SEMICONDUCTORS AND SEMIMETALS, 1983, 19 : 75 - 170
  • [43] Qualification of Semi-Insulating GaAs Substrates.
    Visentin, N.
    Le Vide, les couches minces, 1988, 43 (241): : 155 - 162
  • [44] INVESTIGATION OF VOLTAGE BREAKDOWN IN SEMI-INSULATING GAAS
    HAISTY, RW
    HOYT, PL
    SOLID-STATE ELECTRONICS, 1967, 10 (08) : 795 - &
  • [45] COMPENSATION MECHANISM IN UNDOPED, SEMI-INSULATING GAAS
    SUEMITSU, M
    NISHIJIMA, M
    MIYAMOTO, N
    JOURNAL OF APPLIED PHYSICS, 1991, 69 (10) : 7240 - 7243
  • [46] Surface photovoltage in undoped semi-insulating GaAs
    Liu, Qiang, 1600, American Inst of Physics, Woodbury, NY, United States (74):
  • [47] Measurement of spin diffusion in semi-insulating GaAs
    Weber, C. P.
    Benko, Craig A.
    Hiew, Stanley C.
    JOURNAL OF APPLIED PHYSICS, 2011, 109 (10)
  • [48] Bound exciton spectra in semi-insulating GaAs
    Gislason, HP
    Yang, BH
    ICDS-18 - PROCEEDINGS OF THE 18TH INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS, PTS 1-4, 1995, 196- : 201 - 205
  • [49] Characterization of semi-insulating GaAs for detector application
    Rogalla, M
    Chen, JW
    Geppert, R
    Kienzle, M
    Irsigler, R
    Ludwig, J
    Runge, K
    Fiederle, M
    Benz, KW
    Schmid, TH
    daVia, C
    Lauxtermann, S
    Liu, X
    Krueger, J
    Weber, ER
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1996, 380 (1-2): : 14 - 17
  • [50] OBSERVATION OF CURRENT FILAMENTS IN SEMI-INSULATING GAAS
    BARNETT, AM
    JENSEN, HA
    APPLIED PHYSICS LETTERS, 1968, 12 (10) : 341 - &
12345