ELECTRICAL TRANSPORT IN AS ION-IMPLANTED SI IN THE METAL-INSULATOR-TRANSITION RANGE

被引：0

作者：

GANG, C

VANDERHEIJDEN, RW

DEWAELE, ATAM

GIJSMAN, HM

TIELEN, FPB

机构：

来源：

PHYSICA B | 1990年 / 165卷

关键词：

D O I：

暂无

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：303 / 304

页数：2

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