ELECTRICAL TRANSPORT IN AS ION-IMPLANTED SI IN THE METAL-INSULATOR-TRANSITION RANGE

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作者：

GANG, C

VANDERHEIJDEN, RW

DEWAELE, ATAM

GIJSMAN, HM

TIELEN, FPB

机构：

来源：

PHYSICA B | 1990年 / 165卷

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中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

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页码：303 / 304

页数：2

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