HIGH-POWER COD-FREE OPERATION OF 0.98-MU-M INGAAS/GAAS/INGAP LASERS WITH NONINJECTION REGIONS NEAR THE FACETS

被引：22
|
作者：
SAGAWA, M
HIRAMOTO, K
TOYONAKA, T
SHINODA, K
UOMI, K
机构：
[1] Hitachi Ltd, Tokyo 185, 1-280 Higashi-Koigakubo, Kokubunji
来源：
ELECTRONICS LETTERS | 1994年 / 30卷 / 17期
关键词：
GALLIUM INDIUM ARSENIDE; GALLIUM ARSENIDE; GALLIUM PHOSPHIDE; SEMICONDUCTOR JUNCTION LASERS;
D O I：
10.1049/el:19940970
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The authors demonstrate the catastrophic-optical-damage-free high-output-power operation of 0.98 mu m InGaAs/InGaP/GaAs buried-ridge-structure lasers with non-injection regions near the facets. A maximum output power of 466mW and fundamental operation at 100mW were achieved.
引用
收藏
页码：1410 / 1411
页数：2
相关论文
共 50 条
  • [41] High-power 1.5 µm InAs-InGaAs quantum dot lasers on GaAs substrates
    M. V. Maksimov
    Yu. M. Shernyakov
    N. V. Kryzhanovskaya
    A. G. Gladyshev
    Yu. G. Musikhin
    N. N. Ledentsov
    A. E. Zhukov
    A. P. Vasil’ev
    A. R. Kovsh
    S. S. Mikhrin
    E. S. Semenova
    N. A. Maleev
    E. V. Nikitina
    V. M. Ustinov
    Zh. I. Alferov
    Semiconductors, 2004, 38 : 732 - 735
  • [42] HIGH-TEMPERATURE, HIGH-POWER INGAAS/GAAS QUANTUM-WELL LASERS WITH LATTICE-MATCHED INGAP CLADDING LAYERS
    WU, MC
    CHEN, YK
    KUO, JM
    CHIN, MA
    SERGENT, AM
    IEEE PHOTONICS TECHNOLOGY LETTERS, 1992, 4 (07) : 676 - 679
  • [43] HIGH-POWER INGAAS-GAAS STRAINED QUANTUM-WELL LASERS WITH INGAP CLADDING LAYERS ON P-TYPE GAAS SUBSTRATES
    SIN, YK
    HORIKAWA, H
    KAMIJOH, T
    JOURNAL OF APPLIED PHYSICS, 1992, 72 (07) : 3212 - 3214
  • [44] 0.98-1.02-MU-M STRAINED INGAAS/ALGAAS DOUBLE-QUANTUM-WELL HIGH-POWER LASERS WITH GAINP BURIED WAVE-GUIDES
    ISHIKAWA, S
    FUKAGAI, K
    CHIDA, H
    MIYAZAKI, T
    FUJII, H
    ENDO, K
    IEEE JOURNAL OF QUANTUM ELECTRONICS, 1993, 29 (06) : 1936 - 1942
  • [45] HIGH-POWER AND HIGH-FREQUENCY OPERATION OF INGAASP/INP LASERS AT 1.3-MU-M
    CHEN, TR
    ZHAO, B
    ZHUANG, YH
    YARIV, A
    BLAUVELT, H
    BARCHAIM, N
    FIBER AND INTEGRATED OPTICS, 1990, 9 (04) : 347 - 366
  • [46] GAS-SOURCE MOLECULAR-BEAM EPITAXY GROWTH OF GAAS/INGAP SUPERLATTICE AS OPTICAL CONFINEMENT LAYERS IN 0.98 MU-M INGAAS/INGAP STRAINED-QUANTUM-WELL LASERS
    USAMI, M
    MATSUSHIMA, Y
    TAKAHASHI, Y
    JOURNAL OF CRYSTAL GROWTH, 1995, 150 (1-4) : 1344 - 1349
  • [47] HIGH-POWER OPERATION OF MULTIQUANTUM-WELL DFB LASERS AT 1.3-MU-M
    CHEN, TR
    CHEN, PC
    UNGAR, J
    BARCHAIM, N
    ELECTRONICS LETTERS, 1995, 31 (16) : 1344 - 1345
  • [48] POWER SUPERMODE INGAAS-GAAS LASERS (LAMBDA=0.98 MU-M) GROWN BY THE ORGANOMETAL GAS-PHASE EPITAXY TECHNIQUE
    BORODITSKII, ML
    DULKIN, AE
    KOCHNEV, IV
    LIVSHITS, DA
    SOKOLOVA, NO
    RAFAILOV, EU
    TARASOV, IS
    SHERNYAKOV, YM
    YAVICH, BS
    PISMA V ZHURNAL TEKHNICHESKOI FIZIKI, 1994, 20 (06): : 62 - 66
  • [49] Highly reliable operation of high-power InGaAsP/InGaP/AlGaAs 0.8 μm separate confinement heterostructure lasers
    Fukunaga, Toshiaki
    Wada, Mitsugu
    Asano, Hideki
    Hayakawa, Toshiro
    Japanese Journal of Applied Physics, Part 2: Letters, 1995, 34 (9 B):
  • [50] INFRARED MICROSCOPY STUDIES ON HIGH-POWER INGAAS-GAAS-INGAP LASERS WITH GA2O3 FACET COATINGS
    PASSLACK, M
    BETHEA, CG
    HOBSON, WS
    LOPATA, J
    SCHUBERT, EF
    ZYDZIK, GJ
    NICHOLS, DT
    DEJONG, JF
    CHAKRABARTI, UK
    DUTTA, NK
    IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 1995, 1 (02) : 110 - 116
12345