HIGH-POWER COD-FREE OPERATION OF 0.98-MU-M INGAAS/GAAS/INGAP LASERS WITH NONINJECTION REGIONS NEAR THE FACETS

被引：22
|
作者：
SAGAWA, M
HIRAMOTO, K
TOYONAKA, T
SHINODA, K
UOMI, K
机构：
[1] Hitachi Ltd, Tokyo 185, 1-280 Higashi-Koigakubo, Kokubunji
来源：
ELECTRONICS LETTERS | 1994年 / 30卷 / 17期
关键词：
GALLIUM INDIUM ARSENIDE; GALLIUM ARSENIDE; GALLIUM PHOSPHIDE; SEMICONDUCTOR JUNCTION LASERS;
D O I：
10.1049/el:19940970
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The authors demonstrate the catastrophic-optical-damage-free high-output-power operation of 0.98 mu m InGaAs/InGaP/GaAs buried-ridge-structure lasers with non-injection regions near the facets. A maximum output power of 466mW and fundamental operation at 100mW were achieved.
引用
收藏
页码：1410 / 1411
页数：2
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