INP/IN0.53GA0.47AS HETEROJUNCTION PHOTOTRANSISTORS GROWN BY CHEMICAL BEAM EPITAXY

被引：19
|
作者：
CAMPBELL, JC
TSANG, WT
QUA, GJ
机构：
来源：
IEEE ELECTRON DEVICE LETTERS | 1987年 / 8卷 / 04期
关键词：
D O I：
10.1109/EDL.1987.26591
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：171 / 173
页数：3
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