共 50 条
- [22] TDDB reliability assessment and burn-in for thin gate oxides INTERCONNECT AND CONTACT METALLIZATION, 1998, 97 (31): : 218 - 227
- [24] DRAM reliability degradation by dynamic operation stress during burn-in JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2003, 42 (4B): : 2091 - 2095
- [25] ROLE OF BURN-IN FACILITIES FOR RELIABILITY OF PASSIVE AND SEMICONDUCTOR-DEVICES ELECTRONICS INFORMATION & PLANNING, 1988, 15 (12): : 754 - 762
- [27] DRAM reliability degradation by dynamic operation stress during burn-in Kim, I.-G. (kigy@nano.iis.u-tokyo.ac.jp), 1600, Japan Society of Applied Physics (42):