BREAKDOWN MECHANISMS OF THERMALLY GROWN SILICON DIOXIDE AT HIGH ELECTRIC-FIELDS

被引：6

作者：

KLEIN, N ^{[1
]}

机构：

[1] TECHNION ISRAEL INST TECHNOL,DEPT ELECT ENGN,IL-32000 HAIFA,ISRAEL

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 63卷 / 03期

关键词：

D O I：

10.1063/1.340045

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：970 / 972

页数：3

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