BREAKDOWN MECHANISMS OF THERMALLY GROWN SILICON DIOXIDE AT HIGH ELECTRIC-FIELDS

被引：6

|

作者：

KLEIN, N ^{[1
]}

机构：

[1] TECHNION ISRAEL INST TECHNOL,DEPT ELECT ENGN,IL-32000 HAIFA,ISRAEL

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 63卷 / 03期

关键词：

D O I：

10.1063/1.340045

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：970 / 972

页数：3

相关论文

共 50 条

[21] BREAKDOWN CONDITIONS IN EXTERNAL AND INDUCED ELECTRIC-FIELDS WITH CURRENT PRESENT BEFORE BREAKDOWN
NIKUEV, YA
HIGH TEMPERATURE, 1977, 15 (03) : 404 - 410
[22] SHAPES OF BLUE PHASE CRYSTALS GROWN IN ELECTRIC-FIELDS
PIERANSKI, P
CLADIS, PE
BARBETMASSIN, R
LIQUID CRYSTALS, 1989, 5 (03) : 829 - 838
[23] DIELECTRIC RESPONSE AT HIGH ELECTRIC-FIELDS
YI, KS
CHINESE JOURNAL OF PHYSICS, 1992, 30 (06) : 915 - 923
[24] ELECTRICAL-CONDUCTIVITY OF SILICON DIOXIDE THERMALLY GROWN ON SILICON
SRIVASTAVA, JK
PRASAD, M
WAGNER, JB
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (04) : 955 - 963
[25] ELECTRON TRAPPING LEVELS IN SILICON DIOXIDE THERMALLY GROWN ON SILICON
THOMAS, JH
FEIGL, FJ
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1972, 33 (12) : 2197 - +
[26] PHYSICS AND CHEMISTRY IN HIGH ELECTRIC-FIELDS
KREUZER, HJ
SURFACE SCIENCE, 1991, 246 (1-3) : 336 - 347
[27] THEORY OF FLUCTUATIONS IN HIGH ELECTRIC-FIELDS
MORAWETZ, K
PHYSICAL REVIEW E, 1994, 50 (06) : 4625 - 4635
[28] PHYSICS AND CHEMISTRY IN HIGH ELECTRIC-FIELDS
KREUZER, HJ
WANG, RLC
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1994, 69 (05): : 945 - 955
[29] THE DECREASE IN THE HALL ANGLE AND THE SENSITIVITY OF SILICON MAGNETIC SENSORS AT HIGH ELECTRIC-FIELDS
MUNTER, PJA
KORDIC, S
SENSORS AND ACTUATORS, 1989, 20 (03): : 225 - 232
[30] PLASMA INSTABILITIES IN HIGH ELECTRIC-FIELDS
MORAWETZ, K
JAUHO, AP
PHYSICAL REVIEW E, 1994, 50 (01): : 474 - 479

← 1 2 3 4 5 →