ELECTRON-SCATTERING IN HEAVILY DOPED COMPENSATED POLAR SEMICONDUCTORS

被引：7
|
作者：
CHATTOPADHYAY, D
GHOSAL, A
机构：
来源：
PHYSICAL REVIEW B | 1982年 / 25卷 / 10期
关键词：
D O I：
10.1103/PhysRevB.25.6538
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：6538 / 6541
页数：4
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