ELECTRON-SCATTERING IN HEAVILY DOPED COMPENSATED POLAR SEMICONDUCTORS

被引：7

作者：

CHATTOPADHYAY, D

GHOSAL, A

机构：

来源：

PHYSICAL REVIEW B | 1982年 / 25卷 / 10期

关键词：

D O I：

10.1103/PhysRevB.25.6538

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：6538 / 6541

页数：4

共 50 条

[21] INFLUENCE OF THE ELECTRON-PHONON SCATTERING ON THE SCATTERING OF PHONONS BY PHONONS IN HEAVILY DOPED SEMICONDUCTORS.
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