PHOTOCONDUCTION IN HEAVILY DOPED COMPENSATED SEMICONDUCTORS.

被引：0

作者：

Osipov, V.V.

Foigel', M.G.

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来源：

Soviet physics. Semiconductors | 1982年 / 16卷 / 11期

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摘要：

PHOTOCONDUCTIVITY

引用

页码：1305 / 1308

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[1] PHOTOCONDUCTION IN HEAVILY DOPED COMPENSATED SEMICONDUCTORS
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[9] THEORY OF LUMINESCENCE OF HEAVILY DOPED COMPENSATED NONDEGENERATE SEMICONDUCTORS
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[10] PERIODIC PROCESSES IN COMPENSATED SEMICONDUCTORS.
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