PHOTOCONDUCTION IN HEAVILY DOPED COMPENSATED SEMICONDUCTORS.

被引：0
|
作者：
Osipov, V.V.
Foigel', M.G.
机构：
来源：
Soviet physics. Semiconductors | 1982年 / 16卷 / 11期
关键词：
Compilation and indexing terms; Copyright 2025 Elsevier Inc;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
PHOTOCONDUCTIVITY
引用
收藏
页码：1305 / 1308
相关论文
共 50 条
  • [41] INFLUENCE OF UNIPOLAR INJECTION ON HIGH-FREQUENCY CONDUCTANCE OF COMPENSATED SEMICONDUCTORS.
    Zhdanova, N.G.
    Kagan, M.S.
    Suris, R.A.
    Fuks, B.I.
    Soviet physics. Semiconductors, 1979, 13 (07): : 770 - 773
  • [42] THEORY OF ELECTROLUMINESCENCE OF HEAVILY DOPED SEMICONDUCTORS
    OSIPOV, VV
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1974, 7 (11): : 1405 - 1409
  • [43] Model of DC Tunneling Conductivity via Hydrogen-Like Impurities in Heavily Doped Compensated Semiconductors
    Poklonski, Nikolai A.
    Anikeev, Ilya I.
    Vyrko, Sergey A.
    Zabrodskii, Andrei G.
    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2023, 260 (04):
  • [44] ELECTRON MOBILITY IN HEAVILY DOPED SEMICONDUCTORS
    DAKHOVSKII, IV
    POLYANSK.TA
    SAMOILOV.AG
    SHMARTSE.YV
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1971, 4 (11): : 1857 - +
  • [45] AUGER RECOMBINATION IN HEAVILY DOPED SEMICONDUCTORS
    QUANG, DN
    PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1990, 158 (02): : 669 - 683
  • [46] DIFFUSION CURRENT IN HEAVILY DOPED SEMICONDUCTORS
    BACCARANI, G
    MAZZONE, AM
    SOLID-STATE ELECTRONICS, 1975, 18 (05) : 469 - 470
  • [47] DEBYE TEMPERATURE OF HEAVILY DOPED SEMICONDUCTORS
    BEILIN, VM
    VEKILOV, YK
    KRASILNI.OM
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1970, 3 (09): : 1201 - &
  • [48] ELECTRON SHIELDING IN HEAVILY DOPED SEMICONDUCTORS
    KRIEGER, JB
    PHYSICAL REVIEW, 1969, 178 (03): : 1337 - &
  • [49] SCATTERING OF ELECTRONS IN HEAVILY DOPED SEMICONDUCTORS
    KUROSAWA, T
    MATSUI, M
    SASAKI, W
    JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1977, 42 (05) : 1622 - 1631
  • [50] THEORY OF LUMINESCENCE OF HEAVILY DOPED SEMICONDUCTORS
    LEVANYUK, AP
    OSIPOV, VV
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1973, 7 (06): : 721 - 726
12345