LOW-NOISE ION-IMPLANTED INP FETS

被引：16
|
作者：
SLEGER, KJ
DIETRICH, HB
BARK, ML
SWIGGARD, EM
机构：
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1981年 / 28卷 / 09期
关键词：
D O I：
10.1109/T-ED.1981.20480
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1031 / 1034
页数：4
相关论文
共 50 条
  • [41] ELECTROCHEMICAL CARRIER CONCENTRATION PROFILING OF ION-IMPLANTED INP
    BAHIR, G
    MERZ, JL
    ABELSON, J
    SIGMON, TW
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (06) : C219 - C219
  • [42] Si acceptor excited states in ion-implanted InP
    1600, American Inst of Physics, Woodbury, NY, USA (78):
  • [43] COMPONENT AUTODIFFUSION INTO PROTECTIVE COATINGS IN ION-IMPLANTED INP
    PRANEVICIUS, L
    SARGUNAS, V
    ZUBAUSKAS, G
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1989, 116 (02): : K161 - K164
  • [44] DEFECT PRODUCTION IN ION-IMPLANTED GAAS, GAP AND INP
    WENDLER, E
    WESCH, W
    GOTZ, G
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1991, 55 (1-4): : 789 - 793
  • [45] ELECTRICAL-PROPERTIES OF OXYGEN ION-IMPLANTED INP
    HE, L
    ANDERSON, WA
    JOURNAL OF ELECTRONIC MATERIALS, 1992, 21 (10) : 937 - 945
  • [46] THE EFFECTS OF ANNEALING ON DISORDER PRESERVATION IN ION-IMPLANTED INP
    KOSTIC, S
    NOBES, MJ
    CARTER, G
    DAVIES, JA
    STEVANOVIC, DV
    THOMPSON, DA
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1987, 19-20 : 422 - 426
  • [47] GRADED HETEROJUNCTION ION-IMPLANTED FETS - A COMBINATION OF HETEROEPITAXY AND ION-IMPLANTATION
    WANG, GW
    FENG, M
    LIAW, YP
    KALISKI, R
    HWANG, T
    LAU, CL
    ITO, C
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1990, 37 (03) : 816 - 818
  • [48] Flicker noise in ion-implanted silicon structures
    Makoviychuk, MI
    Parshin, EO
    Rekshinskii, VA
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1997, 127 : 414 - 417
  • [49] THE LOW MODULATION SENSITIVITY FETS FOR LOW-NOISE MICROWAVES DEVICES
    BOGDANOV, YM
    PASHKOVSKY, AB
    TAGER, AS
    RADIOTEKHNIKA I ELEKTRONIKA, 1993, 38 (02): : 346 - 355
  • [50] QUARTER MICRON LOW-NOISE GAAS-FETS
    CHYE, PW
    HUANG, C
    ELECTRON DEVICE LETTERS, 1982, 3 (12): : 401 - 403
12345