LOW-NOISE ION-IMPLANTED INP FETS

被引：16
|
作者：
SLEGER, KJ
DIETRICH, HB
BARK, ML
SWIGGARD, EM
机构：
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1981年 / 28卷 / 09期
关键词：
D O I：
10.1109/T-ED.1981.20480
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1031 / 1034
页数：4
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