X-RAY STANDING WAVE ANALYSIS OF AL/GAAS/SI(111)

被引：1

作者：

KAWAMURA, T

OSHIMA, M

FUKUDA, Y

OHMACHI, Y

IZUMI, K

ISHIKAWA, T

KIKUTA, S

ZHANG, XW

机构：

[1] NIPPON TELEGRAPH & TEL PUBL CORP, OPTOELECTR LABS, ATSUGI, KANAGAWA 24301, JAPAN

[2] UNIV TOKYO, FAC ENGN, TOKYO 113, JAPAN

[3] NATL LAB HIGH ENERGY PHYS, PHOTO FACTORY, OHO, IBARAKI 305, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1992年 / 31卷 / 03期

关键词：

X-RAY STANDING WAVE; SI; GAAS; EPITAXIAL GROWTH; INTERFACE STRUCTURE; AL; SYNCHROTRON RADIATION; ALGAAS;

D O I：

10.1143/JJAP.31.737

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The Al/GaAs interface formed on Si(111) is investigated by means of the X-ray standing wave technique. Different fluorescence profiles of Ga and As K-alpha are observed from a Al/GaAs/Si(111) sample. Comparing the results of Al/GaAs/Si(111) with GaAs/Si(111), most of the Ga atoms are found to change their positions randomly by evaporating Al metal on the GaAs films even at room temperature. On the contrary, most of the As atoms continue to maintain original positions in the diamond structure. This can be explained by interchanging the sites of Ga and Al atoms, and forming (Al, Ga)As layers. The results suggest that interdiffusion and interchange between Al and GaAs layers should not be neglected even at room temperature.

引用

页码：737 / 741

页数：5

共 50 条

[41] X-RAY STANDING-WAVE STUDY OF MONOLAYERS OF SB ON GAAS(110)
KENDELEWICZ, T
WOICIK, JC
MIYANO, KE
HERRERAGOMEZ, A
COWAN, PL
KARLIN, BA
BOULDIN, CE
PIANETTA, P
SPICER, WE
PHYSICAL REVIEW B, 1992, 46 (11): : 7276 - 7279
[42] X-ray standing wave analysis of the effect of isotopic composition on the lattice constants of Si and Ge
Sozontov, E
Cao, LX
Kazimirov, A
Kohn, V
Konuma, M
Cardona, M
Zegenhagen, J
PHYSICAL REVIEW LETTERS, 2001, 86 (23) : 5329 - 5332
[43] CHEMISORPTION OF BROMINE ON CLEAVED SILICON (111) SURFACES - AN X-RAY STANDING WAVE INTERFERENCE SPECTROMETRIC ANALYSIS
DEV, BN
ARISTOV, V
HERTEL, N
THUNDAT, T
GIBSON, WM
SURFACE SCIENCE, 1985, 163 (2-3) : 457 - 477
[44] COMBINED ANALYSIS OF OVERLAYER/S/GAAS INTERFACES WITH PHOTOEMISSION SPECTROSCOPY AND X-RAY STANDING-WAVE
OSHIMA, M
SCIMECA, T
SUGIYAMA, M
MAEYAMA, S
OIGAWA, H
NANNICHI, Y
HASHIZUME, H
APPLIED SURFACE SCIENCE, 1993, 70-1 (1 -4 pt B) : 496 - 501
[45] INTERFACE STRUCTURE OF GaSe / Si(111) STUDIED BY X-RAY STANDING WAVES.
Capelle, B.
Petroff, J. E.
Boulliard, J. C.
Koebel, A.
Zheng, Y.
ACTA CRYSTALLOGRAPHICA A-FOUNDATION AND ADVANCES, 1996, 52 : C475 - C475
[46] COSI2/SI(111) INTERFACE STUDY BY X-RAY STANDING WAVES
LAGOMARSINO, S
NIKOLAENKO, A
SCARINCI, F
DANGELO, S
DERRIEN, J
VEUILLEN, JY
NUOVO CIMENTO DELLA SOCIETA ITALIANA DI FISICA D-CONDENSED MATTER ATOMIC MOLECULAR AND CHEMICAL PHYSICS FLUIDS PLASMAS BIOPHYSICS, 1988, 10 (06): : 709 - 720
[47] X-RAY STANDING WAVE ANALYSIS FOR BROMINE CHEMISORBED ON GERMANIUM
BEDZYK, M
MATERLIK, G
SURFACE SCIENCE, 1985, 152 (APR) : 10 - 16
[48] X-RAY STANDING WAVE FLUORESCENCE MEASUREMENTS IN ULTRAHIGH-VACUUM - ADSORPTION OF BR ON SI(111)-(1X1)
FUNKE, P
MATERLIK, G
SOLID STATE COMMUNICATIONS, 1985, 54 (11) : 921 - 923
[49] X-ray standing wave study of Si clusters on a decagonal Al-Co-Ni quasicrystal surface
Woodruff, D. P.
Ledieu, J.
Lovelock, K. R. J.
Jones, Robert G.
Deyko, A.
Wearing, L. H.
McGrath, R.
Chaudhuri, A.
Li, H. I.
Su, S. Y.
Mayer, A.
Stanisha, N. A.
Diehl, R. D.
PHYSICAL REVIEW B, 2015, 91 (11)
[50] ADATOM LOCATION ON THE SI(111) 7X7 AND SI(111) ROOT-3X-ROOT-3-IN SURFACES BY THE X-RAY STANDING-WAVE AND PHOTOEMISSION TECHNIQUES
WOICIK, JC
KENDELEWICZ, T
HERRERAGOMEZ, A
ANDREWS, AB
KIM, BS
COWAN, PL
MIYANO, KE
BOULDIN, CE
KARLIN, BA
HERMAN, GS
ERSKINE, JL
PIANETTA, P
SPICER, WE
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1993, 11 (04): : 2359 - 2363

← 1 2 3 4 5 →