X-RAY STANDING WAVE ANALYSIS OF AL/GAAS/SI(111)

被引：1
|
作者：
KAWAMURA, T
OSHIMA, M
FUKUDA, Y
OHMACHI, Y
IZUMI, K
ISHIKAWA, T
KIKUTA, S
ZHANG, XW
机构：
[1] NIPPON TELEGRAPH & TEL PUBL CORP, OPTOELECTR LABS, ATSUGI, KANAGAWA 24301, JAPAN
[2] UNIV TOKYO, FAC ENGN, TOKYO 113, JAPAN
[3] NATL LAB HIGH ENERGY PHYS, PHOTO FACTORY, OHO, IBARAKI 305, JAPAN
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1992年 / 31卷 / 03期
关键词：
X-RAY STANDING WAVE; SI; GAAS; EPITAXIAL GROWTH; INTERFACE STRUCTURE; AL; SYNCHROTRON RADIATION; ALGAAS;
D O I：
10.1143/JJAP.31.737
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The Al/GaAs interface formed on Si(111) is investigated by means of the X-ray standing wave technique. Different fluorescence profiles of Ga and As K-alpha are observed from a Al/GaAs/Si(111) sample. Comparing the results of Al/GaAs/Si(111) with GaAs/Si(111), most of the Ga atoms are found to change their positions randomly by evaporating Al metal on the GaAs films even at room temperature. On the contrary, most of the As atoms continue to maintain original positions in the diamond structure. This can be explained by interchanging the sites of Ga and Al atoms, and forming (Al, Ga)As layers. The results suggest that interdiffusion and interchange between Al and GaAs layers should not be neglected even at room temperature.
引用
收藏
页码：737 / 741
页数：5
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