TWO-DIMENSIONAL SIMULATION OF SUBMICROMETER GAAS-MESFETS - SURFACE EFFECTS AND OPTIMIZATION OF RECESSED GATE STRUCTURES

被引：38

作者：

HELIODORE, F ^{[1
]}

LEFEBVRE, M ^{[1
]}

SALMER, G ^{[1
]}

ELSAYED, OL ^{[1
]}

机构：

[1] UNIV CAIRO,FAC ENGN,DEPT ELECTR & COMMUN,CAIRO,EGYPT

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1988年 / 35卷 / 07期

关键词：

D O I：

10.1109/16.3332

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：824 / 830

页数：7

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