Noise calculation of submicrometer MESFETs by using two-dimensional physical simulators

The noise performance of submicrometer MESFETs is determined by using physical simulators. The hydrodynamic transport model equations are linearized and efficiently solved in frequency domain in two dimensions to determine the small-signal parameters and the minimum noise figure up to frequencies near the device cut-off frequency. For higher frequencies, the noise performance is obtained by using a two-dimensional Monte-Carlo code which fully incorporates valley non-parabolicity, carrier-carrier interactions, and degeneracy effects into the model. Different device structures are simulated and the obtained results are compared with experimental data.