SEM AND EMPA ANALYSIS OF IMPURITIES RELATED TO GAAS SUBSTRATES AND MBE GROWN GAAS-LAYERS

被引：1
|
作者：
KADHIM, NJ [1 ]
MUKHERJEE, D [1 ]
机构：
[1] S BANK POLYTECH,DEPT ELECT & ELECTR ENGN,LONDON,ENGLAND
来源：
VACUUM | 1988年 / 38卷 / 01期
关键词：
D O I：
10.1016/0042-207X(88)90249-7
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
10
引用
收藏
页码：11 / 12
页数：2
相关论文
共 50 条
  • [41] Characterization of MBE grown ZnO on GaAs(111) substrates
    Matsumoto, T
    Nishimura, K
    Nishii, A
    Ota, A
    Nabetani, Y
    Kato, T
    PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3, NO 4, 2006, 3 (04): : 984 - +
  • [42] SEM and EPMA studies of oval defects on MBE GaAs layers
    Kadhim, NJ
    Mukherjee, D
    JOURNAL OF MATERIALS SCIENCE LETTERS, 1998, 17 (07) : 595 - 597
  • [43] LATTICE LOCATION OF ER IN GAAS AND AL0.5GA0.5AS LAYERS GROWN BY MBE ON (100) GAAS SUBSTRATES
    ALVES, E
    DASILVA, MF
    EVANS, KR
    JONES, CR
    MELO, AA
    SOARES, JC
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1993, 80-1 : 180 - 183
  • [44] Study of GaAs layers grown by MBE at low temperature
    Deng, Hangjun
    Fan, Tiwen
    Wang, Zhanguo
    Liang, Jiben
    Zhu, Zhanping
    Li, Ruigang
    Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, 1994, 15 (05): : 317 - 321
  • [45] CHARACTERIZATION OF MOVPE-GROWN GAAS-LAYERS BY C-V ANALYSIS
    PASKOVA, T
    YAKIMOVA, R
    VALCHEVA, E
    GERMANOVA, K
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1993, 56 (01): : 69 - 72
  • [46] SEM and EPMA studies of oval defects on MBE GaAs layers
    De Montfort Univ, Leicester, United Kingdom
    J Mater Sci Lett, 7 (595-597):
  • [47] STUDY OF PARAMETERS OF GAAS-LAYERS GROWN ON SI SUBSTRATES BY THE LIQUID-PHASE EPITAXY TECHNIQUE
    ABRAMOV, AV
    DERYAGIN, NG
    TRETYAKOV, DN
    FALEEV, NN
    PISMA V ZHURNAL TEKHNICHESKOI FIZIKI, 1993, 19 (23): : 45 - 49
  • [48] MICROSTRUCTURE OF ANNEALED LOW-TEMPERATURE-GROWN GAAS-LAYERS
    LILIENTALWEBER, Z
    CLAVERIE, A
    WASHBURN, J
    SMITH, F
    CALAWA, R
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1991, 53 (02): : 141 - 146
  • [49] SEMIINSULATING GAAS-LAYERS GROWN BY MOLECULAR-BEAM EPITAXY
    KORDOS, P
    FORSTER, A
    BETKO, J
    MORVIC, M
    NOVAK, J
    APPLIED PHYSICS LETTERS, 1995, 67 (07) : 983 - 985
  • [50] ON THE MORPHOLOGY OF SB-DOPED GAAS-LAYERS GROWN BY MOVPE
    YAKIMOVA, R
    PASKOVA, T
    TRIFONOVA, EP
    THIN SOLID FILMS, 1995, 265 (1-2) : 123 - 128
12345