SEM AND EMPA ANALYSIS OF IMPURITIES RELATED TO GAAS SUBSTRATES AND MBE GROWN GAAS-LAYERS

被引:1
|
作者
KADHIM, NJ [1 ]
MUKHERJEE, D [1 ]
机构
[1] S BANK POLYTECH,DEPT ELECT & ELECTR ENGN,LONDON,ENGLAND
关键词
D O I
10.1016/0042-207X(88)90249-7
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
10
引用
收藏
页码:11 / 12
页数:2
相关论文
共 50 条
  • [31] ANGLE-DEPENDENT MAGNETORESISTANCE MEASUREMENTS ON EPITAXIAL GAAS-LAYERS GROWN ON CONDUCTIVE SUBSTRATES
    SOMOGYI, K
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1993, 8 (10) : 1834 - 1841
  • [32] CHARACTERIZATION OF GAAS-LAYERS GROWN ON POLYCRYSTALLINE GAAS BY LPE AND CURRENT CONTROLLED LPE
    ABULFADL, A
    STEFANAKOS, E
    NANCE, W
    COLLIS, W
    MCPHERSON, J
    JOURNAL OF ELECTRONIC MATERIALS, 1980, 9 (03) : 621 - 638
  • [33] CHARACTERIZATION OF GAAS-LAYERS GROWN ON POLYCRYSTALLINE GAAS BY LPE AND CURRENT CONTROLLED LPE
    ABULFADL, A
    STEFANAKOS, E
    NANCE, W
    COLLIS, W
    MCPHERSON, J
    JOURNAL OF ELECTRONIC MATERIALS, 1979, 8 (05) : 725 - 725
  • [34] Impact of LT-GaAs layers on crystalline properties of the epitaxial GaAs films grown by MBE on Si substrates
    Petrushkov, M. O.
    Putyato, M. A.
    Gutakovsky, A. K.
    Preobrazhenskii, V. V.
    Loshkarev, I. D.
    Emelyanov, E. A.
    Semyagin, B. R.
    Vasev, A. V.
    3RD INTERNATIONAL SCHOOL AND CONFERENCE ON OPTOELECTRONICS, PHOTONICS, ENGINEERING AND NANOSTRUCTURES (SAINT PETERSBURG OPEN 2016), 2016, 741
  • [35] ANALYSIS OF THE MOLECULAR-BEAM EPITAXY (MBE) PROCESS - APPLICATION TO THE GROWTH OF GAAS-LAYERS
    BLANCHET, R
    DELHOMME, B
    URGELL, JJ
    ONDE ELECTRIQUE, 1979, 59 (04): : 83 - 92
  • [36] OBSERVATION OF BIAS-DEPENDENT CAPTURE-EMISSION PROCESSES IN MBE-GROWN GAAS-LAYERS
    HSU, WC
    CHANG, CY
    HAU, SS
    WANG, SJ
    SOLID-STATE ELECTRONICS, 1987, 30 (02) : 221 - 226
  • [37] CHARACTERIZATION OF GAAS GROWN ON SI EPITAXIAL LAYERS ON GAAS SUBSTRATES
    ADOMI, K
    STRITE, S
    MORKOC, H
    NAKAMURA, Y
    OTSUKA, N
    JOURNAL OF APPLIED PHYSICS, 1991, 69 (01) : 220 - 225
  • [38] TETRAGONAL LATTICE DISTORTION AND TENSILE-STRESS IN GAAS-LAYERS GROWN ON SI SUBSTRATES BY MOCVD
    ISHIDA, K
    AKIYAMA, M
    NISHI, S
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1987, 26 (05): : L530 - L532
  • [39] CHARACTERIZATION OF GAAS-LAYERS GROWN DIRECTLY ON SI SUBSTRATES BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
    PEARTON, SJ
    VERNON, SM
    ABERNATHY, CR
    SHORT, KT
    CARUSO, R
    STAVOLA, M
    GIBSON, JM
    HAVEN, VE
    WHITE, AE
    JACOBSON, DC
    JOURNAL OF APPLIED PHYSICS, 1987, 62 (03) : 862 - 867
  • [40] GaSb films grown by MBE on GaAs(001) substrates
    Hao, Rui-Ting
    Shen, Lan-Xian
    Deng, Shu-Kang
    Yang, Pei-Zhi
    Tu, Jie-Lei
    Liao, Hua
    Xu, Ying-Qiang
    Niu, Zhi-Chuan
    Gongneng Cailiao/Journal of Functional Materials, 2010, 41 (04): : 734 - 736