VARIABLE-RANGE HOPPING IN A SILICON INVERSION LAYER

被引：71

作者：

PEPPER, M

POLLITT, S

ADKINS, CJ

OAKLEY, RE

机构：

[1] PLESSEY CO LTD,ALLEN CLARK RES CTR,TOWCESTER,NORTHANTSHIRE,ENGLAND

[2] CAVENDISH LAB,CAMBRIDGE,ENGLAND

来源：

PHYSICS LETTERS A | 1974年 / A 47卷 / 01期

关键词：

D O I：

10.1016/0375-9601(74)90111-X

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：71 / 72

页数：2

共 12 条

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ABRAM, RA .

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[2] ELECTRICAL-CONDUCTION IN HEAVILY DOPED GERMANIUM [J].

ALLEN, FR ;

ADKINS, CJ .

PHILOSOPHICAL MAGAZINE, 1972, 26 (04) :1027-&

[3] MAGNETICALLY INDUCED SPIN-REVERSAL TRANSITIONS IN IMPURITY HOP CONDUCTION IN N-TYPE GERMANIUM [J].

CHROBOCZEK, JA ;

PROHOFSKY, EW ;

SLADEK, RJ .

PHYSICAL REVIEW, 1968, 169 (03) :593-+

[4] TRANSPORT PROPERTIES OF ELECTRONS IN INVERTED SILICON SURFACES [J].

FANG, FF ;

FOWLER, AB .

PHYSICAL REVIEW, 1968, 169 (03) :619-+

[5]

GODBER G, UNPUBLISHED

[6] VARIABLE RANGE HOPPING IN A NONUNIFORM DENSITY OF STATES [J].

HAMILTON, EM .

PHILOSOPHICAL MAGAZINE, 1972, 26 (04) :1043-&

[7]

MOTT N, 1973, ELECTRON POWER, V19, P321, DOI 10.1049/ep.1973.0382

[8]

MOTT NF, 1972, PHIL MAG, V26, P1051

[9]

ROSS EC, 1969, RCA REV, V30, P366

[10] SELF-CONSISTENT RESULTS FOR N-TYPE SI INVERSION LAYERS [J].

STERN, F .

PHYSICAL REVIEW B, 1972, 5 (12) :4891-&

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