SELF-CONSISTENT RESULTS FOR N-TYPE SI INVERSION LAYERS

被引:1063
作者
STERN, F
机构
来源
PHYSICAL REVIEW B | 1972年 / 5卷 / 12期
关键词
D O I
10.1103/PhysRevB.5.4891
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
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页码:4891 / &
相关论文
共 26 条
[1]  
ABRAMOWITZ M, 1964, HDB MATH FUNCTIONS, pCH10
[2]   EFFECT OF MAGNETIC FIELD ON ENERGY OF SURFACE BOUND STATES [J].
APPELBAUM, JA ;
BARAFF, GA .
PHYSICAL REVIEW B-SOLID STATE, 1971, 4 (04) :1235-+
[3]   PARAMETRIC APPROACH TO SURFACE SCREENING OF A WEAK EXTERNAL ELECTRIC FIELD [J].
APPELBAUM, JA ;
BARAFF, GA .
PHYSICAL REVIEW B-SOLID STATE, 1971, 4 (04) :1246-+
[4]   EFFECT OF ELECTRIC AND MAGNETIC-FIELD ON SELF-CONSISTENT POTENTIAL AT SURFACE OF A DEGENERATE SEMICONDUCTOR [J].
BARAFF, GA ;
APPELBAUM, JA .
PHYSICAL REVIEW B-SOLID STATE, 1972, 5 (02) :475-+
[5]  
BARAFF GA, TO BE PUBLISHED
[6]  
Brooks H., 1955, ADVAN ELECTRON ELECT, V7, P158
[7]   OPTICAL ABSORPTION DUE TO SPACE-CHARGE-INDUCED LOCALIZED STATES [J].
DUKE, CB .
PHYSICAL REVIEW, 1967, 159 (03) :632-+
[8]   NEGATIVE FIELD-EFFECT MOBILITY ON (100) SI SURFACES [J].
FANG, FF ;
HOWARD, WE .
PHYSICAL REVIEW LETTERS, 1966, 16 (18) :797-&
[9]   HALL MEASUREMENTS ON SILICON FIELD EFFECT TRANSISTOR STRUCTURES [J].
FOWLER, AB ;
HOCHBERG, F ;
FANG, F .
IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1964, 8 (04) :427-&
[10]   MAGNETO-OSCILLATORY CONDUCTANCE IN SILICON SURFACES [J].
FOWLER, AB ;
FANG, FF ;
HOWARD, WE ;
STILES, PJ .
PHYSICAL REVIEW LETTERS, 1966, 16 (20) :901-&