LOCALIZED STATES IN INVERTED SILICON-SILICON DIOXIDE INTERFACES

被引：25

作者：

ABRAM, RA ^{[1
]}

机构：

[1] PLESSEY CO LTD,ALLEN CLARK RES CTR,CASWELL,TOWCESTER,ENGLAND

来源：

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1973年 / 6卷 / 20期

关键词：

D O I：

10.1088/0022-3719/6/20/001

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：L379 / L381

页数：3

共 10 条

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[6]

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[7]

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[8] INFLUENCE OF DIELECTRIC CHARGE ON HOLE FIELD-EFFECT MOBILITY IN SILICON INVERSION LAYERS [J].

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[9] SCATTERING OF ELECTRONS BY SURFACE OXIDE CHARGES AND BY LATTICE-VIBRATIONS AT SILICON-SILICON DIOXIDE INTERFACE [J].

SAH, CT ;

TSCHOPP, LL ;

NING, TH .

SURFACE SCIENCE, 1972, 32 (03) :561-&

[10] PROPERTIES OF SEMICONDUCTOR SURFACE INVERSION LAYERS IN ELECTRIC QUANTUM LIMIT [J].

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