SUBLINEAR IMPURITY SOLUBILITY IN INDIUM-PHOSPHIDE AND GALLIUM-ARSENIDE EPITAXIAL LAYERS

被引：1
|
作者：
EVTIMOVA, S [1 ]
ARNAUDOV, B [1 ]
YANCHEV, I [1 ]
机构：
[1] UNIV SOFIA,INST SEMICOND PHYS & TECHNOL,BU-1126 SOFIA,BULGARIA
来源：
JOURNAL OF CRYSTAL GROWTH | 1995年 / 148卷 / 1-2期
关键词：
D O I：
10.1016/0022-0248(94)00665-2
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
The solubility curves of tellurium donors in InP and GaAs liquid phase epitaxial layers, as well as germanium and zinc accepters in GaAs and InP, respectively, are studied on the basis of impurity and native defect equilibria. In a wide doping range our results are in good accordance with calculated solubility dependences. The influence of vacancies in both sublattices on the impurity incorporation is taken into account. As a result, a sublinear donor and nearly linear acceptor solubility occurs, depending on the vacancy-to-impurity concentration ratio.
引用
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页码：17 / 24
页数：8
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