共 50 条
- [1] PHOTOLUMINESCENCE SPECTRA OF EPITAXIAL FILMS OF GALLIUM-ARSENIDE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1973, 6 (08): : 1400 - 1401
- [2] INFLUENCE OF COMPENSATION ON EDGE PHOTOLUMINESCENCE OF EPITAXIAL GALLIUM-ARSENIDE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 9 (12): : 1541 - 1543
- [3] NATURE OF -1.2 EV LUMINESCENCE BAND OF GALLIUM-ARSENIDE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1974, 8 (04): : 425 - 427
- [4] NATURE OF 1.26-1.30 EV PHOTOLUMINESCENCE BAND OF COPPER-DOPED GALLIUM-ARSENIDE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1973, 6 (10): : 1616 - 1619
- [5] IMPURITY THERMOREFLECTION OF GALLIUM-ARSENIDE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1974, 8 (06): : 741 - 743
- [6] IMPURITY ANALYSIS OF GALLIUM-ARSENIDE SEMI-INSULATING III-V MATERIALS, MALMO 1988, 1988, : 165 - 170
- [9] NATURE OF RECOMBINATION CENTERS RESPONSIBLE FOR 0.79-0.85 EV BAND PHOTOLUMINESCENCE SPECTRUM OF CHROMIUM-DOPED GALLIUM-ARSENIDE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 8 (12): : 1495 - 1498