1.0 EV IMPURITY BAND IN PHOTOLUMINESCENCE SPECTRUM OF EPITAXIAL GALLIUM-ARSENIDE

被引：0

作者：

BATAVIN, VV

POPOVA, GV

机构：

来源：

SOVIET PHYSICS SEMICONDUCTORS-USSR | 1974年 / 7卷 / 09期

关键词：

D O I：

暂无

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：1194 / 1197

页数：4

共 50 条

[41] DOPING OF EPITAXIAL GALLIUM-ARSENIDE GROWN BY METALORGANICS METHOD
KEIL, G
LEMETAYER, M
CUQUEL, A
LEPOLLOTEC, D
REVUE DE PHYSIQUE APPLIQUEE, 1982, 17 (07): : 405 - 413
[42] BERYLLIUM DOPING OF GALLIUM-ARSENIDE METALORGANIC EPITAXIAL LAYERS
MELLET, R
AZOULAY, R
DUGRAND, L
RAO, EVK
MIRCEA, A
INSTITUTE OF PHYSICS CONFERENCE SERIES, 1982, (63): : 583 - 584
[43] HOT PHOTOLUMINESCENCE IN BERYLLIUM-DOPED GALLIUM-ARSENIDE
IMHOFF, EA
BELL, MI
FORMAN, RA
SOLID STATE COMMUNICATIONS, 1985, 54 (10) : 845 - 848
[44] PECULIARITIES OF DISLOCATION DISTRIBUTION IN EPITAXIAL LAYERS OF GALLIUM-ARSENIDE
DRANENKO, AS
NOVIKOV, NN
IVANOV, VN
UKRAINSKII FIZICHESKII ZHURNAL, 1982, 27 (11): : 1668 - 1670
[45] EFFECTIVE GALVANOMAGNETIC PROPERTIES OF EPITAXIAL GALLIUM-ARSENIDE FILMS
GLUSHKOV, EA
REZTSOV, VF
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1980, 14 (07): : 748 - 750
[46] LUMINESCENCE OF EPITAXIAL GALLIUM-ARSENIDE HEAVILY DOPED WITH SILICON
KOVALENKO, VF
PROKHOROVICH, AV
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1982, 16 (11): : 1333 - 1334
[47] STUDY OF STRUCTURAL INHOMOGENEITIES IN EPITAXIAL LAYERS OF GALLIUM-ARSENIDE
KLEBANOVA, NA
MELAMED, MM
NOSIKOV, SV
SOROKIN, IN
TERENTEVA, GN
INORGANIC MATERIALS, 1982, 18 (07) : 925 - 927
[48] CONTROL OF SULFUR DOPING FOR GALLIUM-ARSENIDE EPITAXIAL LAYERS
SAVVA, MA
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (10) : 1498 - 1502
[49] RESIDUAL CONDUCTANCE OF EPITAXIAL-FILMS OF GALLIUM-ARSENIDE
SYTENKO, TN
TYAGULSK.IP
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1974, 8 (01): : 109 - 110
[50] POLARIZATION ANISOTROPY OF HOT PHOTOLUMINESCENCE IN GALLIUM-ARSENIDE CRYSTALS
MIRLIN, DN
RESHINA, II
ZHURNAL EKSPERIMENTALNOI I TEORETICHESKOI FIZIKI, 1977, 73 (03): : 859 - 864

← 1 2 3 4 5 →