ON THERMAL AND EXCESS CURRENTS IN GASB TUNNEL DIODES

被引：2
|
作者：
NANAVATI, RP
EISENCRAFT, M
机构：
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1968年 / ED15卷 / 10期
关键词：
D O I：
10.1109/T-ED.1968.16520
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：796 / +
页数：1
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