Silicon tunnel diodes formed by proximity rapid thermal diffusion

被引：25
|
作者：
Wang, JL [1 ]
Wheeler, D [1 ]
Yan, Y [1 ]
Zhao, JL [1 ]
Howard, S [1 ]
Seabaugh, A [1 ]
机构：
[1] Univ Notre Dame, Dept Elect Engn, Notre Dame, IN 46556 USA
来源：
IEEE ELECTRON DEVICE LETTERS | 2003年 / 24卷 / 02期
关键词：
negative differential resistance (NDR); negative resistance; rapid thermal diffusion; spin-on diffusant; tunnel diode;
D O I：
10.1109/LED.2002.807706
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We demonstrate the first silicon tunnel diodes (TDs) formed using proximity rapid thermal diffusion and spin-on diffusants. Room temperature peak-to-valley current ratio of 2 is obtained at approximately 100 A/cm(2) peak current density. Secondary ion mass spectroscopy is used to compare proximity rapid thermal diffusion with rapid thermal diffusion from spin-coated diffusants in direct contact with a device wafer. The proximity rapid thermal diffusion approach provides a cleaner wafer surface for subsequent processing and yields TDs with good local uniformity.
引用
收藏
页码：93 / 95
页数：3
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