Silicon tunnel diodes formed by proximity rapid thermal diffusion

被引：25

作者：

Wang, JL ^{[1
]}

Wheeler, D ^{[1
]}

Yan, Y ^{[1
]}

Zhao, JL ^{[1
]}

Howard, S ^{[1
]}

Seabaugh, A ^{[1
]}

机构：

[1] Univ Notre Dame, Dept Elect Engn, Notre Dame, IN 46556 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2003年 / 24卷 / 02期

关键词：

negative differential resistance (NDR); negative resistance; rapid thermal diffusion; spin-on diffusant; tunnel diode;

D O I：

10.1109/LED.2002.807706

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We demonstrate the first silicon tunnel diodes (TDs) formed using proximity rapid thermal diffusion and spin-on diffusants. Room temperature peak-to-valley current ratio of 2 is obtained at approximately 100 A/cm(2) peak current density. Secondary ion mass spectroscopy is used to compare proximity rapid thermal diffusion with rapid thermal diffusion from spin-coated diffusants in direct contact with a device wafer. The proximity rapid thermal diffusion approach provides a cleaner wafer surface for subsequent processing and yields TDs with good local uniformity.

引用

页码：93 / 95

页数：3

共 50 条

[41] RTP silicon oxynitrides to fabricate MOS tunnel diodes
Christiano, Veronica
dos Santos Filho, Sebastiao G.
2013 28TH SYMPOSIUM ON MICROELECTRONICS TECHNOLOGY AND DEVICES (SBMICRO 2013), 2013,
[42] EFFECTS OF TENSION ON EXCESS CURRENTS AND DIFFUSION IN TUNNEL DIODES
POCHAT, A
LOAEC, J
JOHANNIN, P
COMPTES RENDUS HEBDOMADAIRES DES SEANCES DE L ACADEMIE DES SCIENCES SERIE B, 1968, 266 (18): : 1195 - &
[43] DIFFUSION AND CODIFFUSION OF BORON AND ARSENIC IN MONOCRYSTALLINE SILICON DURING RAPID THERMAL ANNEALINGS
GONTRAND, C
ANCEY, P
HADDAB, H
CHAUSSEMY, G
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1992, 7 (02) : 181 - 187
[44] LARGE DIFFUSION LENGTH ENHANCEMENT IN SILICON BY RAPID THERMAL CODIFFUSION OF PHOSPHORUS AND ALUMINUM
HARTITI, B
SLAOUI, A
MULLER, JC
SIFFERT, P
APPLIED PHYSICS LETTERS, 1993, 63 (09) : 1249 - 1251
[45] RAPID THERMAL-DIFFUSION OF BORON IMPLANTED AS BORON DIFLUORIDE IN PREAMORPHIZED SILICON
WALKER, AJ
JOURNAL OF APPLIED PHYSICS, 1992, 71 (04) : 2033 - 2035
[46] TRANSIENT ENHANCED DIFFUSION DURING RAPID THERMAL ANNEALING OF BORON IMPLANTED SILICON
CHO, K
NUMAN, M
FINSTAD, TG
CHU, WK
LIU, J
WORTMAN, JJ
APPLIED PHYSICS LETTERS, 1985, 47 (12) : 1321 - 1323
[47] SIMULATION OF TRANSIENT BORON-DIFFUSION DURING RAPID THERMAL ANNEALING IN SILICON
HEINRICH, M
BUDIL, M
POTZL, HW
JOURNAL OF APPLIED PHYSICS, 1991, 69 (12) : 8133 - 8138
[48] Indium out-diffusion from silicon during rapid thermal annealing
Li, HJ
Bennett, J
Zeitzoff, P
Kirichenko, TA
Banerjee, SK
Henke, D
IEEE ELECTRON DEVICE LETTERS, 2003, 24 (04) : 221 - 223
[49] Rapid thermal dopants diffusion and surface passivation for silicon solar cells applications
Slaoui, A
Lachiq, A
Ventura, L
Muller, JC
RAPID THERMAL AND INTEGRATED PROCESSING V, 1996, 429 : 127 - 132
[50] An advanced model for dopant diffusion in polycrystalline silicon during rapid thermal annealing
Abadli, S.
Mansour, F.
2006 INTERNATIONAL CONFERENCE ON MEMS, NANO AND SMART SYSTEMS, PROCEEDINGS, 2006, : 11 - +

← 1 2 3 4 5 →