Complex dielectric function of CdTe/GaAs thin films studied by spectroscopic ellipsometry

被引：0
|
作者：
Jeen, Gwangsoo [1 ]
Jo, Jaehyuk [1 ]
Park, Hyoyeol [2 ]
机构：
[1] Busan Natl Univ, Dept Phys, Busan 680749, South Korea
[2] Ulsan Coll, Dept Semicond Applicat, Ulsan 680749, South Korea
来源：
JOURNAL OF THE KOREAN CRYSTAL GROWTH AND CRYSTAL TECHNOLOGY | 2005年 / 15卷 / 04期
关键词：
CdTe thin film; Spectroscopic ellipsomerty; Dielectric function;
D O I：
暂无
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Spectroscopic ellipsomerty measurements of the complex dielectric function of the CdTe thin films grown on GaAs(100) substrates by hot wall epitaxy have been performed in 1.5-5.5 eV photon energy range at room temperature. The spectroscopic ellipsometer spectra revealed distinct structures at energies of the E-1,E-1 + Delta(1)and E-2 critical points. These energies were decreased with increasing thickness of CdTe thin films.
引用
收藏
页码：157 / 161
页数：5
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