ELECTRONIC SPUTTERING OF CARBON CLUSTERS FROM ION-BEAM IRRADIATED ORGANIC FILMS

被引:10
|
作者
PAPALEO, RM [1 ]
HALLEN, A [1 ]
DEMIREV, P [1 ]
BRINKMALM, G [1 ]
ERIKSSON, J [1 ]
HAKANSSON, P [1 ]
SUNDQVIST, BUR [1 ]
机构
[1] UNIV UPPSALA,DEPT RADIAT SCI,DIV ION PHYS,S-75121 UPPSALA,SWEDEN
来源
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1994年 / 91卷 / 1-4期
关键词
D O I
10.1016/0168-583X(94)96309-6
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
Positive ions of even numbered carbon clusters C2n+ (n > 20) are ejected as a result of the interaction of fast MeV ions with poly(vinylidene fluoride) (PVDF). Experiments provide circumstantial evidence that these ejected carbon clusters have a three-dimensional structure, consisting of pentagons and hexagons, i.e. they are fullerenes. We have studied the effect of macroscopic carbonisation induced by ion bombardment on the ejection of carbon cluster ions (C(n)+, n = 1-33; C2n+ , n = 21-50) from PVDF. Damage cross-section values are extracted from the fluence dependence of the secondary ion yields. The yield of fullerene ions from PVDF decreases as a function of MeV ion fluence. Accordingly, macroscopic carbonisation of the polymer is detrimental and is not a prerequisite to fullerene emission, confirming earlier findings that these carbon clusters are formed and ejected in a single MeV ion impact basis. For comparison, the sputtering of carbon cluster ions originating from films of poly(tetrafluorethylene), poly(styrene), poly(ethylene terephthalate) and fluorinated fullerene have also been studied.
引用
收藏
页码:677 / 681
页数:5
相关论文
共 50 条
  • [31] DEPOSITION OF TANTALUM THIN-FILMS BY ION-BEAM SPUTTERING
    YAMANAKA, S
    NAOE, M
    KAWAI, S
    JAPANESE JOURNAL OF APPLIED PHYSICS, 1977, 16 (07) : 1245 - 1246
  • [32] Fluoropolymer Films Deposited by Argon Ion-Beam Sputtering of Polytetrafluoroethylene
    Golub, M.A.
    Banks, B.A.
    Rutledge, S.K.
    Kitral, M.C.
    ACS Symposium Series, 2001, 787 : 213 - 221
  • [33] Epitaxial growth of SiGe thin films by ion-beam sputtering
    Sasaki, K
    Nakata, K
    Hata, T
    APPLIED SURFACE SCIENCE, 1997, 113 : 43 - 47
  • [34] Ion-beam assisted sputtering of titanium nitride thin films
    Draher, Timothy
    Polakovic, Tomas
    Li, Juliang
    Li, Yi
    Welp, Ulrich
    Jiang, Jidong Samuel
    Pearson, John
    Armstrong, Whitney
    Meziani, Zein-Eddine
    Chang, Clarence
    Kwok, Wai-Kwong
    Xiao, Zhili
    Novosad, Valentine
    SCIENTIFIC REPORTS, 2023, 13 (01)
  • [35] LASER ANNEALING OF NB FILMS PREPARED BY ION-BEAM SPUTTERING
    TAKEI, K
    NAGAI, K
    INAMURA, T
    JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (07) : L392 - L394
  • [36] IMPURITIES IN THIN-FILMS PRODUCED BY ION-BEAM SPUTTERING
    BHATTACHARYA, RS
    JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (09) : L523 - L526
  • [37] Stoichiometry of Silicon Dioxide Films Obtained by Ion-Beam Sputtering
    E. V. Telesh
    A. P. Dostanko
    O. V. Gurevich
    Journal of Applied Spectroscopy, 2018, 85 : 67 - 72
  • [38] REACTIVE DUAL ION-BEAM SPUTTERING OF OXIDE-FILMS
    SCAGLIONE, S
    EMILIANI, G
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1985, 3 (06): : 2702 - 2703
  • [39] SPECTRALLY SELECTIVE PBS FILMS PRODUCED BY ION-BEAM SPUTTERING
    MARTIN, PJ
    NETTERFIELD, RP
    SAINTY, WG
    THIN SOLID FILMS, 1982, 87 (03) : 203 - 206
  • [40] SUPERCONDUCTING PROPERTIES OF NIOBIUM FILMS SUBJECTED TO ION-BEAM SPUTTERING
    KRAVCHENKO, VV
    MARKUS, AI
    KRIVOBOK, VV
    VELICHKO, NI
    UDOVENKO, VF
    BONDARENKO, SI
    SALTEVSKII, GI
    FIZIKA TVERDOGO TELA, 1980, 22 (04): : 1247 - 1249