LASER ANNEALING OF SELF-ION DAMAGED SILICON

被引：4
|
作者：
FOTI, G [1 ]
CAMPISANO, SU [1 ]
BAERI, P [1 ]
RIMINI, E [1 ]
TSENG, WF [1 ]
机构：
[1] USN,RES LAB,WASHINGTON,DC 20375
来源：
APPLIED PHYSICS LETTERS | 1979年 / 35卷 / 09期
关键词：
D O I：
10.1063/1.91260
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：701 / 703
页数：3
相关论文
共 50 条
  • [21] Carrier lifetime studies of deeply penetrating defects in self-ion implanted silicon
    Macdonald, DH
    Maeckel, H
    Doshi, S
    Brendle, W
    Cuevas, A
    Williams, JS
    Conway, MJ
    APPLIED PHYSICS LETTERS, 2003, 82 (18) : 2987 - 2989
  • [22] Gettering of Cu in self-ion irradiated silicon studied by positron annihilation spectroscopy
    Matsukawa, Kazuhito
    Fujinami, Masanori
    Shirai, Koun
    Oguma, Koichi
    Akahane, Takashi
    Suzuki, Ryoichi
    Ohdaira, Toshiyuki
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2019, 58 (09)
  • [23] Formation and annealing of dislocation damage from high-dose self-ion implantation of aluminum
    Vardiman, R.G.
    Journal of Applied Physics, 1992, 71 (11):
  • [24] Defect annealing in neutron and ion damaged silicon: Influence of defect clusters and doping
    Fleming, R. M.
    Seager, C. H.
    Bielejec, E.
    Vizkelethy, G.
    Lang, D. V.
    Campbell, J. M.
    JOURNAL OF APPLIED PHYSICS, 2010, 107 (05)
  • [25] Onset of implant-related recombination in self-ion implanted and annealed crystalline silicon
    Macdonald, D., 1600, American Institute of Physics Inc. (96):
  • [26] In situ NRA study of hydrogen isotope exchange in self-ion damaged tungsten exposed to neutral atoms
    Markelj, S.
    Zaloznik, A.
    Schwarz-Selinger, T.
    Ogorodnikova, O. V.
    Vavpetic, P.
    Pelicon, P.
    Cadez, I.
    JOURNAL OF NUCLEAR MATERIALS, 2016, 469 : 133 - 144
  • [27] SWELLING IN SELF-ION IRRADIATED NIOBIUM
    BAJAJ, R
    HALL, BO
    FENSKE, GR
    SHIELS, SA
    JOURNAL OF METALS, 1985, 37 (11): : A78 - A79
  • [28] Nanostructuring in Ge by self-ion implantation
    Romano, L.
    Impellizzeri, G.
    Tomasello, M. V.
    Giannazzo, F.
    Spinella, C.
    Grimaldi, M. G.
    JOURNAL OF APPLIED PHYSICS, 2010, 107 (08)
  • [29] Comparative analysis of ion and laser pulse annealing of silicon
    Bumai, Yu.A.
    Domorod, N.E.
    Ul'yashin, A.G.
    Journal of Engineering Physics (English Translation of Inzhenerno-Fizicheskii Zhurnal), 1991, 60 (03): : 395 - 397
  • [30] Comparative analysis of pulsed ion and laser silicon annealing
    Bumaj, Yu.A.
    Domorod, N.E.
    Ul'yashin, A.G.
    Inzhenerno-Fizicheskii Zhurnal, 1991, 60 (03): : 494 - 498
12345