LASER ANNEALING OF SELF-ION DAMAGED SILICON

被引：4
|
作者：
FOTI, G [1 ]
CAMPISANO, SU [1 ]
BAERI, P [1 ]
RIMINI, E [1 ]
TSENG, WF [1 ]
机构：
[1] USN,RES LAB,WASHINGTON,DC 20375
来源：
APPLIED PHYSICS LETTERS | 1979年 / 35卷 / 09期
关键词：
D O I：
10.1063/1.91260
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：701 / 703
页数：3
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