LONG-CHANNEL SILICON-ON-INSULATOR MOSFET THEORY

被引：39

作者：

ORTIZCONDE, A ^{[1
]}

HERRERA, R ^{[1
]}

SCHMIDT, PE ^{[1
]}

SANCHEZ, FJG ^{[1
]}

ANDRIAN, J ^{[1
]}

机构：

[1] FLORIDA INT UNIV,DEPT ELECT & COMP ENGN,MIAMI,FL 33199

来源：

SOLID-STATE ELECTRONICS | 1992年 / 35卷 / 09期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1016/0038-1101(92)90164-8

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Based on the procedure of Pierret and Shields [1, Solid-St. Electron. 26, 143, 1983] for the long-channel bulk MOSFET, a new single-integral expression is obtained to describe the current-voltage characteristics for the silicon-on-insulator (SOI) MOSFET. This expression is valid for: any degree of inversion, all back-gate bias conditions and any semiconductor film thickness. Our single-integral expression, applied to a given back-gate bias condition and using the appropriate approximations, can be simplified to the results of the previous models.

引用

页码：1291 / 1298

页数：8

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