INFLUENCE OF AN INVERSION LAYER ON THE TUNNEL FIELD GENERATION OF CARRIERS IN METAL-INSULATOR SEMICONDUCTOR STRUCTURES

被引：0

|

作者：

LITOVSKII, RN

机构：

来源：

SOVIET PHYSICS SEMICONDUCTORS-USSR | 1988年 / 22卷 / 04期

关键词：

D O I：

暂无

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

收藏

页码：445 / 449

页数：5

相关论文

共 50 条

[21] PHOTOELECTRIC PROPERTIES OF METAL-INSULATOR-SEMICONDUCTOR STRUCTURES WITH A TUNNEL-TRANSPARENT INSULATOR LAYER (REVIEW).
Val', A.Ya.
Sachenko, A.V.
Soviet physics. Semiconductors, 1983, 17 (08): : 865 - 874
[22] PHOTOELECTRIC PROPERTIES OF METAL-INSULATOR-SEMICONDUCTOR STRUCTURES WITH A TUNNEL-TRANSPARENT INSULATOR LAYER (REVIEW)
VUL, AY
SACHENKO, AV
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1983, 17 (08): : 865 - 874
[23] ANALYSIS OF GAAS SCHOTTKY TUNNEL METAL-INSULATOR SEMICONDUCTOR DIODE CHARACTERISTICS BASED ON AN INTERFACIAL LAYER MODEL
IKOMA, H
ISHIDA, T
SATO, K
ISHIKAWA, T
MAEDA, K
JOURNAL OF APPLIED PHYSICS, 1993, 73 (03) : 1272 - 1278
[24] ABRUPT DEPLETION LAYER APPROXIMATION FOR THE METAL-INSULATOR SEMICONDUCTOR DIODE
JONES, K
AMERICAN JOURNAL OF PHYSICS, 1979, 47 (04) : 369 - 372
[25] PHOTODETECTORS BASED ON METAL TUNNEL INSULATOR SEMICONDUCTOR STRUCTURES
VUL, AY
DIDEIKIN, AT
SENSORS AND ACTUATORS A-PHYSICAL, 1993, 39 (01) : 7 - 18
[26] THE THEORY OF INTERFACE STATES AND CONDUCTIVITY IN METAL-INSULATOR SEMICONDUCTOR STRUCTURES
GERGEL, VA
SURIS, RA
ZHURNAL EKSPERIMENTALNOI I TEORETICHESKOI FIZIKI, 1983, 84 (02): : 719 - 736
[27] PROCESS TECHNIQUES AND RADIATION EFFECTS IN METAL-INSULATOR SEMICONDUCTOR STRUCTURES
DENNEHY, WJ
HOLMESSI.AG
ZAININGE.KH
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1967, NS14 (06) : 276 - &
[28] INFLUENCE OF HEAT-TREATMENT ON THE DENSITY OF RADIATION DEFECTS IN THE INSULATOR AND ON THE SEMICONDUCTOR SURFACE IN METAL-INSULATOR SILICON STRUCTURES
DALIEV, KS
LEBEDEV, AA
ECKE, W
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1987, 21 (05): : 511 - 514
[29] INFLUENCE OF GENERATION OF MINORITY-CARRIERS ON CAPACITANCE SPECTROSCOPY OF SURFACE-STATES IN METAL-INSULATOR-SEMICONDUCTOR STRUCTURES
LEBEDEV, AA
ECKE, W
YUFEREV, VS
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1985, 19 (10): : 1100 - 1103
[30] ELECTRICAL-PROPERTIES OF METAL-INSULATOR METAL AND METAL-INSULATOR SEMICONDUCTOR STRUCTURES CONTAINING LANGMUIR-BLODGETT INSULATING MULTILAYERS
KANEKO, F
SHIBATA, M
INABA, Y
KOBAYASHI, S
THIN SOLID FILMS, 1989, 179 : 121 - 127

← 1 2 3 4 5 →