INFLUENCE OF AN INVERSION LAYER ON THE TUNNEL FIELD GENERATION OF CARRIERS IN METAL-INSULATOR SEMICONDUCTOR STRUCTURES

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LITOVSKII, RN

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SOVIET PHYSICS SEMICONDUCTORS-USSR | 1988年 / 22卷 / 04期

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O469 [凝聚态物理学];

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070205 ;

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页码：445 / 449

页数：5

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