共 50 条
- [1] INFLUENCE OF TUNNEL GENERATION PROCESSES ON THE RELAXATION OF THE CAPACITANCE OF METAL-INSULATOR SEMICONDUCTOR STRUCTURES SOVIET PHYSICS SEMICONDUCTORS-USSR, 1982, 16 (10): : 1134 - 1137
- [3] GENERATION LIFETIME OF CARRIERS IN METAL-INSULATOR GERMANIUM STRUCTURES SOVIET PHYSICS SEMICONDUCTORS-USSR, 1984, 18 (08): : 939 - 940
- [4] INFLUENCE OF RH ON PARAMETERS OF METAL-INSULATOR SEMICONDUCTOR STRUCTURES SOVIET PHYSICS SEMICONDUCTORS-USSR, 1987, 21 (04): : 467 - 468
- [6] INFLUENCE OF LEAKAGE CURRENTS THROUGH AN INSULATOR ON THE BEHAVIOR OF METAL-INSULATOR SEMICONDUCTOR STRUCTURES SOVIET PHYSICS SEMICONDUCTORS-USSR, 1991, 25 (03): : 263 - 266
- [7] SOLAR-CELLS MADE OF METAL-INSULATOR SEMICONDUCTOR STRUCTURES WITH A TUNNEL-THIN INSULATOR SOVIET PHYSICS SEMICONDUCTORS-USSR, 1986, 20 (02): : 156 - 157
- [8] INFLUENCE OF GAMMA-IRRADIATION ON CARRIER GENERATION IN METAL-INSULATOR SEMICONDUCTOR STRUCTURES MADE OF SILICON SOVIET PHYSICS SEMICONDUCTORS-USSR, 1989, 23 (10): : 1168 - 1169
- [9] INFLUENCE OF GAMMA-IRRADIATION ON THE PROPERTIES OF METAL-INSULATOR SEMICONDUCTOR STRUCTURES SOVIET PHYSICS SEMICONDUCTORS-USSR, 1984, 18 (04): : 452 - 454
- [10] SURFACE EXCITON IN METAL-INSULATOR SEMICONDUCTOR STRUCTURES SOVIET PHYSICS SEMICONDUCTORS-USSR, 1987, 21 (08): : 908 - 910