ON MEASUREMENT OF IMPURITY ATOM DISTRIBUTIONS ARISING FROM ION IMPLANTATION IN HIGH-RESISTIVITY SILICON

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作者：
KENNEDY, DP
MURLEY, PC
KLEINFEL.W
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来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1968年 / 115卷 / 03期
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O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
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页码：C74 / &
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