DESIGN OF A CHARGE SENSITIVE PREAMPLIFIER ON HIGH-RESISTIVITY SILICON

被引：49
|
作者：
RADEKA, V
REHAK, P
RESCIA, S
GATTI, E
LONGONI, A
SAMPIETRO, M
HOLL, P
STRUDER, L
KEMMER, J
机构：
[1] POLITECN MILAN,I-20133 MILAN,ITALY
[2] MAX PLANCK INST,D-8000 MUNCHEN,FED REP GER
[3] TECH UNIV MUNCHEN,D-8048 GRACHING,FED REP GER
[4] MESSERSCHMITT BOLKOW BLOHM GMBH,D-8000 MUNICH,FED REP GER
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1988年 / 35卷 / 01期
关键词：
D O I：
10.1109/23.12696
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
6
引用
收藏
页码：155 / 159
页数：5
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