PREPARATION OF ZNO FILMS BY REACTIVE EVAPORATION

被引：36
|
作者：
JIN, M
YING, LS
机构：
[1] Institute of Optoelectronic Materials and Devices, Shandong University
来源：
THIN SOLID FILMS | 1994年 / 237卷 / 1-2期
关键词：
D O I：
10.1016/0040-6090(94)90230-5
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Zinc oxide (ZnO) films were deposited on heated glass substrates by evaporating zinc chloride (ZnCl2) in oxygen. Structural, optical and electrical properties of the deposited films were investigated. High-transparency films with resistivity as low as 3.5 x 10(-3) Omega cm could be prepared by adjusting parameters. The energy gap of ZnO film was evaluated as 3.3 eV from optical absorption measurements. The electron carrier densities in the range (4-12) x 10(19) cm(-3) and mobilities of 10-40 cm(2) V-1 s(-1) were observed.
引用
收藏
页码：16 / 18
页数：3
相关论文
共 50 条
  • [41] Preparation and characterization of transparent conductive ZnO:Ga films by DC reactive magnetron sputtering
    Ma, Quan-Bao
    Ye, Zhi-Zhen
    He, Hai-Ping
    Wang, Jing-Rui
    Zhu, Li-Ping
    Zhao, Bing-Hui
    MATERIALS CHARACTERIZATION, 2008, 59 (02) : 124 - 128
  • [42] Preparation and electrical properties of ZnO/PZT films by radio frequency reactive magnetron sputtering
    Meng, Xiangqin
    Yang, Chengtao
    Fu, Wujun
    Wan, Jing
    MATERIALS LETTERS, 2012, 83 : 179 - 182
  • [43] Preparation and characterization of transparent conducting ZnO: Zr films deposited by reactive magnetron sputtering
    Zhang, Hua-Fu
    Niu, Rui-Hua
    Guangdianzi Jiguang/Journal of Optoelectronics Laser, 2012, 23 (07): : 1333 - 1337
  • [44] Preparation of ZnO thin films for high-resolution field emission display by electron beam evaporation
    Nakanishi, Yoichiro
    Miyake, Aki
    Kominami, Hiroko
    Aoki, Toru
    Hatanaka, Yoshinori
    Shimaoka, Goro
    Applied Surface Science, 1999, 142 (01): : 233 - 236
  • [45] Preparation of ZnO thin films for high-resolution field emission display by electron beam evaporation
    Nakanishi, Y
    Miyake, A
    Kominami, H
    Aoki, T
    Hatanaka, Y
    Shimaoka, G
    APPLIED SURFACE SCIENCE, 1999, 142 (1-4) : 233 - 236
  • [46] ANNEALING TREATMENT OF ZnO THIN FILMS PREPARED BY NON-REACTIVE E-BEAM EVAPORATION TECHNIQUE
    Golshahi, S.
    Rozati, S. M.
    Ghasempoor, T.
    DIGEST JOURNAL OF NANOMATERIALS AND BIOSTRUCTURES, 2011, 6 (02) : 445 - 450
  • [47] Influence of the oxygen partial pressure on the opto-electrical properties of ZnO thin films deposited by reactive evaporation
    Gordillo, G
    Olarte, J
    Calderón, C
    PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 2000, 220 (01): : 293 - 297
  • [48] Low-temperature epitaxy of ZnO films on Si(001) and silica by reactive e-beam evaporation
    Wu, HZ
    He, KM
    Qiu, DJ
    Huang, DM
    JOURNAL OF CRYSTAL GROWTH, 2000, 217 (1-2) : 131 - 137
  • [49] Catalytic growth of semiconducting ZnO nanowires by reactive evaporation process
    Park, J
    Choi, HH
    Singh, RK
    UNCONVENTIONAL APPROACHES TO NANOSTRUCTURES WITH APPLICATIONS IN ELECTRONICS, PHOTONICS, INFORMATION STORAGE AND SENSING, 2003, 776 : 107 - 112
  • [50] Room temperature synthesis of ZnO nanoneedles by activated reactive evaporation
    Yuvaraj, D.
    Rao, K. Narasimha
    Nanda, K. K.
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2009, 42 (03)
12345