DEFECT COMPLEXES IN NEUTRON-IRRADIATED SILICON DETECTORS - EVALUATION AND EFFECTS

被引：9
|
作者：
BRUZZI, M [1 ]
BALDINI, A [1 ]
BORCHI, E [1 ]
LUKIANOV, I [1 ]
机构：
[1] JOINT INST NUCL RES DUBNA,MOSCOW 101000,RUSSIA
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 1993年 / 326卷 / 1-2期
关键词：
D O I：
10.1016/0168-9002(93)90375-R
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
Silicon p+n junction detectors irradiated with fast neutron fluences up to 10(13) n/cm2 have been measured using the thermally stimulated current (TSC) technique. Defect complexes revealed in irradiated silicon by this experimental analysis are presented. A new peak, which can be explained using a cluster model, is observed when a forward filling voltage is applied to the samples during the measurement. A brief report on the changes in electrical parameters (leakage current and effective free charged carrier concentration) after irradiation is included.
引用
收藏
页码：344 / 349
页数：6
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