DEFECT COMPLEXES IN NEUTRON-IRRADIATED SILICON DETECTORS - EVALUATION AND EFFECTS

被引：9

作者：

BRUZZI, M ^{[1
]}

BALDINI, A ^{[1
]}

BORCHI, E ^{[1
]}

LUKIANOV, I ^{[1
]}

机构：

[1] JOINT INST NUCL RES DUBNA,MOSCOW 101000,RUSSIA

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 1993年 / 326卷 / 1-2期

关键词：

D O I：

10.1016/0168-9002(93)90375-R

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Silicon p+n junction detectors irradiated with fast neutron fluences up to 10(13) n/cm2 have been measured using the thermally stimulated current (TSC) technique. Defect complexes revealed in irradiated silicon by this experimental analysis are presented. A new peak, which can be explained using a cluster model, is observed when a forward filling voltage is applied to the samples during the measurement. A brief report on the changes in electrical parameters (leakage current and effective free charged carrier concentration) after irradiation is included.

引用

页码：344 / 349

页数：6

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