DEMONSTRATION OF A HETEROSTRUCTURE FIELD-EFFECT LASER FOR OPTOELECTRONIC INTEGRATION

被引：16
|
作者：
TAYLOR, GW
CLAISSE, PR
COOKE, P
机构：
来源：
APPLIED PHYSICS LETTERS | 1991年 / 58卷 / 07期
关键词：
D O I：
10.1063/1.104562
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A new laser structure suitable for optoelectronic integration is reported. It utilizes field effect at a heterointerface within the same structure used to build field-effect transistors. A threshold current density of 560 A/cm2 and a differential quantum efficiency of 56% were achieved.
引用
收藏
页码：666 / 668
页数：3
相关论文
共 50 条
  • [41] MONOLITHIC INTEGRATION OF AN INJECTION-LASER AND A METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR
    URY, I
    MARGALIT, S
    YUST, M
    YARIV, A
    APPLIED PHYSICS LETTERS, 1979, 34 (07) : 430 - 431
  • [42] LASER FIELD-EFFECT ON RADIATIONLESS TRANSITIONS
    STREK, W
    ACTA PHYSICA POLONICA A, 1982, 61 (1-2) : 193 - 199
  • [43] Ambipolar organic field-effect transistor based on an organic heterostructure
    Rost, C. (cro@zurich.ibm.com), 1600, American Institute of Physics Inc. (95):
  • [44] InAs/GaSb Heterostructure Nanowires for Tunnel Field-Effect Transistors
    Borg, B. Mattias
    Dick, Kimberly A.
    Ganjipour, Bahram
    Pistol, Mats-Erik
    Wernersson, Lars-Erik
    Thelander, Claes
    NANO LETTERS, 2010, 10 (10) : 4080 - 4085
  • [45] HETEROSTRUCTURE FIELD-EFFECT TRANSISTOR, PHYSICAL ANALYSIS AND NEW STRUCTURES
    SALMER, G
    JOURNAL DE PHYSIQUE, 1988, 49 (C-4): : 125 - 134
  • [46] New transport phenomena in a ballistic heterostructure field-effect transistor
    Kastalsky, A.
    Bhat, R.
    Cho, A.Y.
    Sivco, D.L.
    1600, American Inst of Physics, Woodbury, NY, USA (74):
  • [47] BISTABLE FIELD-EFFECT TRANSISTOR (BISFET) - A NOVEL HETEROSTRUCTURE DEVICE
    OJHA, JJ
    SIMMONS, JG
    ELECTRONICS LETTERS, 1993, 29 (11) : 1028 - 1029
  • [48] HIGH-SPEED HOMOSTRUCTURE AND HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS
    DAMBKES, H
    HEIME, K
    FESTKORPERPROBLEME-ADVANCES IN SOLID STATE PHYICS, 1984, 24 : 311 - 330
  • [49] A novel triple δ-doped GeSi heterostructure field-effect transistor
    Lee, Chun Hsin
    Wu, San Lein
    Chang, Shoou Jinn
    Miura, Atsushi
    Koh, Shinji
    Shiraki, Yasuhiro
    Japanese Journal of Applied Physics, Part 2: Letters, 2002, 41 (11 A):
  • [50] AlGaN/InGaN/GaN double heterostructure field-effect transistor
    Simin, G
    Hu, XH
    Tarakji, A
    Zhang, JP
    Koudymov, A
    Saygi, S
    Yang, JW
    Khan, A
    Shur, MS
    Gaska, R
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2001, 40 (11A): : L1142 - L1144
12345