DEMONSTRATION OF A HETEROSTRUCTURE FIELD-EFFECT LASER FOR OPTOELECTRONIC INTEGRATION

被引：16
|
作者：
TAYLOR, GW
CLAISSE, PR
COOKE, P
机构：
来源：
APPLIED PHYSICS LETTERS | 1991年 / 58卷 / 07期
关键词：
D O I：
10.1063/1.104562
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A new laser structure suitable for optoelectronic integration is reported. It utilizes field effect at a heterointerface within the same structure used to build field-effect transistors. A threshold current density of 560 A/cm2 and a differential quantum efficiency of 56% were achieved.
引用
收藏
页码：666 / 668
页数：3
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